IRF4435

IRF4435

IRF4435

Nhà sản xuất: International Rectifier (IR)

IRF4435 P-Channel Power MOSFET

- Kiểu chân: SOIC(8); Hãng: IR;

- Single P-Channel HEXFET Power MOSFET: VDSS=-30V, RDS(on)=20mΩ, ID=-8A, TJ, Tstg: -55 to +150oC;

Giá: 7,000đ/ con

S.LượngĐơn giá
17,000
106,900
1006,700

Còn: 123

Số lượng mua:

Thông tin sản phẩm

IRF4435 P-Channel Power MOSFET   DataSheet

Features

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

Description

These P-channel HEXFET  Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.  With these improvements, multiple devices can be used in an application with dramatically reduced board space.  The package is designed for vapor phase, infrared, or wave soldering techniques.

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