IRF4435
IRF4435
Nhà sản xuất: International Rectifier (IR)
IRF4435 P-Channel Power MOSFET
- Kiểu chân: SOIC(8); Hãng: IR;
- Single P-Channel HEXFET Power MOSFET: VDSS=-30V, RDS(on)=20mΩ, ID=-8A, TJ, Tstg: -55 to +150oC;
Giá: 7,000đ/ con
| S.Lượng | Đơn giá |
|---|---|
| 1 | 7,000 |
| 10 | 6,900 |
| 100 | 6,700 |
Còn: 123
Thông tin sản phẩm
IRF4435 P-Channel Power MOSFET 
DataSheet
Features
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Description
These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
